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PDTA113Z Datasheet, PDF (5/18 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW | |||
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NXP Semiconductors
PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 kâ¦, R2 = 10 kâ¦
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = â50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = â30 V; IB = 0 A
VCE = â30 V; IB = 0 A;
Tj = 150 °C
VEB = â5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = â5 V; IC = â5 mA
IC = â10 mA; IB = â0.5 mA
VI(off)
VI(on)
off-state input voltage VCE = â5 V; IC = â100 µA
on-state input voltage VCE = â300 mV; IC = â20 mA
R1
bias resistor 1 (input)
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = â10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
â100
nA
-
-
â1
µA
-
-
â50
µA
-
-
â800
µA
35
-
-
-
-
â150
mV
-
â0.65
â0.3
V
â2.5
â0.95
-
V
0.7
1
1.3
kâ¦
8
10
12
-
-
2
pF
PDTA113Z_SER_4
Product data sheet
Rev. 04 â 2 September 2009
© NXP B.V. 2009. All rights reserved.
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