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PDTA113Z Datasheet, PDF (1/18 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW
PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
Rev. 04 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP resistor-equipped transistors.
Table 1. Product overview
Type number
Package
NXP
PDTA113ZE
SOT416
PDTA113ZK
SOT346
PDTA113ZM
SOT883
PDTA113ZS[1]
SOT54 (TO-92)
PDTA113ZT
SOT23
PDTA113ZU
SOT323
JEITA
SC-75
SC-59
SC-101
SC-43A
-
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTC113ZE
PDTC113ZK
PDTC113ZM
PDTC113ZS
PDTC113ZT
PDTC113ZU
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I General purpose switching and
amplification
I Inverter and interface circuits
I Circuit drivers
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
-
-
−50 V
-
-
−100 mA
0.7 1
1.3 kΩ
8
10
12