PBHV9050T Datasheet, PDF (5/12 Pages) NXP Semiconductors – 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −360 V;
current
I_E = 0 A
V_CB = −360 V;
I_E = 0 A; T_j = 150 °C
I_CES
collector-emitter cut-off V_CE = −360 V;
current
V_BE = 0 V
I_EBO
emitter-base cut-off
V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
V_BEsat
f_T
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
transition frequency
V_CE = −10 V
I_C = −10 mA
I_C = −50 mA
I_C = −20 mA;
I_B = −2 mA
I_C = −50 mA;
I_B = −10 mA
I_C = −50 mA;
I_B = −10 mA
V_CE = −10 V;
I_E = −10 mA;
f = 100 MHz
C_c
collector capacitance V_CB = −20 V;
I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = −0.5 V;
I_C = i_c = 0 A;
f = 1 MHz
t_d
delay time
t_r
rise time
t_on
turn-on time
t_s
storage time
V_CC = −20 V;
I_C = −0.05 A;
I_Bon = −5 mA;
I_Boff = 10 mA
t_f
fall time
t_off
turn-off time
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Min
-
-
-
-
100
[1] ₈₀
-
-
[1] _-
-
-
-
-
-
-
-
-
-
Typ Max Unit
-
−100 nA
-
−10 µA
-
−100 nA
-
−100 nA
160 300
160 300
−115 −200 mV
−95 −200 mV
−0.75 −0.9 V
50
-
MHz
6
-
pF
170 -
pF
75
-
ns
1600 -
ns
1675 -
ns
1200 -
ns
550 -
ns
1750 -
ns
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
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