PBHV9050T Datasheet, PDF(1/12 Page) NXP Semiconductors – 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

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PBHV9050T Datasheet, PDF (1/12 Pages) NXP Semiconductors – 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

PBHV9050T

500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

Rev. 01 â 16 September 2009

Product data sheet

1. Product proï¬le

1.1 General description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBTA45.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I AEC-Q101 qualiï¬ed

1.3 Applications

I Electronic ballasts

I LED driver for LED chain module

I LCD backlighting

I Automotive motor management

I Flyback converters

I Hook switch for wired telecom

I Switch Mode Power Supply (SMPS)

1.4 Quick reference data

Table 1.

Symbol

VCESM

VCEO

hFE

Quick reference data

Parameter

collector-emitter peak

voltage

collector-emitter voltage

collector current

DC current gain

Conditions

VBE = 0 V

open base

VCE = â10 V;

IC = â50 mA

Min Typ Max Unit

â500 V

â0.15 A

160 300

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