BUK7605-30A Datasheet, PDF (5/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7605-30A
10
9
8
7
6
5
4
Ciss
3
2
Coss
1
Crss
0
0.01
0.1
1 _VDS/V 10
100
Fig.13. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
12
VGS/V
10
8
VDS = 14V
24V
6
4
2
0
0
20
40
60
80
100
120
140
QG/nC
Fig.14. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 50 A; parameter V_DS
100
ID/A
80
60
Tj/C = 175
25
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSDS/V
Fig.15. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
W_DSS% = f(T_mb); conditions: I_D = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.17. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
+ ^VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.18. Switching test circuit.
August 1999
5
Rev 1.100