BUK7605-30A Datasheet, PDF (4/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7605-30A
7.5 ^RDS(ON)/mOhm
7
6.5
6
5.5
5
4.5
4
3.5
3
5
10
VGS/V ¹⁵
20
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions I_D = 25 A;
100
ID/A
80
60
40
Tj/C = 175
25
20
0
0
1
2
3 _VGS/V 4
5
6
7
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
90
gfs/S
80
70
60
50
40
30
20
10
0
0
20
40 _ID/A 60
80
100
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Tj / C
Fig.10. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.11. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.12. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
August 1999
4
Rev 1.100