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| BUJ303AX_11 Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN power transistor Very high voltage capability Isolated package | |||
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NXP Semiconductors
BUJ303AX
NPN power transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-h)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
heatsink
thermal resistance from junction to
ambient
Conditions
with heatsink compound ;
see Figure 5
in free air
Min Typ Max Unit
-
-
3.95 K/W
-
55 -
K/W
10
Zth(j-h)
(K/W)
1
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
0
003aag067
Ptot
tp
δ=
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp
t
T
10
tp (s) 102
Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Visol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Cisol
isolation capacitance
Conditions
50 Hz ⤠f ⤠60 Hz; RH ⤠65 %; Th = 25 °C;
from all terminals to external heatsink; clean
and dust free
from collector to external heatsink ;
f = 1 MHz; Th = 25 °C
Min Typ Max Unit
-
-
2500 V
-
10
-
pF
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 â 3 May 2011
© NXP B.V. 2011. All rights reserved.
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