BUJ303AX_11 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor Very high voltage capability Isolated package

BUJ303AX
NPN power transistor
Rev. 05 — 3 May 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a
SOT186A (TO220F) "full pack" plastic package.
1.2 Features and benefits
„ Fast switching
„ Isolated package
„ Very high voltage capability
„ Very low switching and conduction
losses
1.3 Applications
„ DC-to-DC converters
„ High frequency electronic lighting
ballasts
„ Inverters
„ Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I_C
Quick reference data
Parameter
collector current
P_tot
V_CESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
h_FE
DC current gain
Dynamic characteristics
t_f
fall time
Conditions
see Figure 1; see Figure 2;
see Figure 4
T_h ≤ 25 °C; see Figure 3
V_BE = 0 V
I_C = 5 mA; V_CE = 5 V;
T_h = 25 °C; see Figure 11
I_C = 500 mA; V_CE = 5 V;
T_h = 25 °C; see Figure 11
I_C = 2.5 A; I_Bon = 0.5 A;
see Figure 14; see Figure 15;
V_BB = -5 V; L_B = 1 µH;
T_h = 25 °C
Min Typ Max Unit
-
-
5A
-
-
32 W
-
-
1000 V
10 22 35
14 25 35
-
145 160 ns