|
BFS540_00 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
|
◁ |
Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFS540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
handbook, 2ha0lfpage
GUM
(dB)
16
VCE = 8 V
4V
12
MRC007
8
4
0
0
10
20
30
40
50
IC (mA)
f = 900 MHz; Tamb = 25 °C.
Fig.6 Maximum unilateral power gain as a
function of collector current.
handbook, 1ha5lfpage
gain
(dB)
10
5
MRC006
G max
GUM
0
0
20
40
60
IC (mA)
VCE = 8 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
G UM
MSG
10
0
10â2
10â1
MRC004
G max
1
10
f (GHz)
IC = 10 mA; VCE = 8 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
2000 May 30
handbook, 5h0alfpage
gain
(dB)
40
30
20
10
0
10â2
G UM
MSG
10â1
MRC005
G max
1
10
f (GHz)
IC = 40 mA; VCE = 8 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
5
|
▷ |