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BFS540_00 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFS540
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ⤠80 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
VALUE
190
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
|s21|2
F
PL1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise ï¬gure
output power at 1 dB gain
compression
third order intercept point
IE = 0; VCE = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; RL = 50 â¦;
f = 900 MHz; Tamb = 25 °C
note 2
MIN. TYP. MAX. UNIT
â
â
50 nA
100 120 250
â
2
â
pF
â
0.9 â
pF
â
0.6 â
â
9
â
pF
GHz
â
14 â
dB
â
8
â
dB
12 13 â
dB
â
1.3 1.8 dB
â
1.9 2.4 dB
â
2.1 â
dB
â
21 â
dBm
â
34 â
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
GUM = 10 log (---1-----â------s---1---1---s-2---2)--(1---1-2---â------s----2--2----2----) dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pâq) = 898 MHz and at f(2qâp) = 904 MHz.
2000 May 30
3
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