BFG10 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

NXP Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
2.714 fA
2
BF
102.8 −
3
NF
0.998 −
4
VAF
28.12 V
5
IKF
6.009 A
6
ISE
403.2 pA
7
NE
2.937 −
8
BR
31.01 −
9
NR
0.999 −
10
VAR
2.889 V
11
IKR
0.284 A
12
ISC
1.487 fA
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.100 −
3.500 Ω
1.000 µA
3.500 Ω
0.217 Ω
0.196 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
5.125 pF
23
VJE
0.600 V
24
MJE
0.367 −
25
TF
12.07 ps
26
XTF
99.40 −
27
VTF
7.220 V
28
ITF
3.950 A
29
PTF
0.000 deg
30
CJC
2.327 pF
31
32
33
34⁽¹⁾
35⁽¹⁾
36⁽¹⁾
37⁽¹⁾
38
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
0.668 V
0.398 −
0.160 −
0.000 ns
0.000 F
750.0 mV
0.000 −
0.652 −
Note
1. These parameters have not been extracted,
the default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
E
L2
C
Cce
MBC964
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c);
f_c = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
84
17
191
0.12
0.21
0.06
0.95
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
Rev. 05 - 22 November 2007
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