BFG10 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

NXP Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG10; BFG10/X
FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
PINNING
PIN
DESCRIPTION
BFG10 (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG10/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
MARKING
TYPE NUMBER
BFG10
BFG10/X
CODE
%MS
%MT
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
RF performance at T_amb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
V_CE
P_L
G_p
η_c
(GHz)
(V)
(mW)
(dB)
(%)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
200
≥5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_C(AV)
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 60 °C; see Fig.2; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
8
2.5
250
250
400
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
Rev. 05 - 22 November 2007
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