BF1108 Datasheet, PDF (5/10 Pages) NXP Semiconductors – Silicon RF switches

NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
0
L_ins(on)
−1
−2
−3
mgs357
0
ISL_off
−20
−40
mgs358
−4
0
400
800 _{f (MHz)} 1200
−60
0
400
800 _{f (MHz)} 1200
V_SK = V_DK = 0 V; R_S = R_L = 50 Ω; I_F = 0 mA (diode
forward current).
Measured in test circuit see Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values
V_SK = V_DK = 5 V; R_S = R_L = 50 Ω; I_F = 1 mA (diode
forward current).
Measured in test circuit see Figure 3.
Fig 2. Off-state isolation as a function of frequency;
typical values
V
1 nF
100 kΩ
50 Ω
input
BF1108/BF1108R ^{47 kΩ}
1 nF
1 nF
50 Ω
output
On-state: V = 0 V.
Off-state: V = 5 V.
Fig 3. Test circuit
4.7 kΩ
100 kΩ
V
1 nF
mbl028
BF1108_BF1108R_4
Product data sheet
Rev. 04 — 29 May 2008
© NXP B.V. 2008. All rights reserved.
5 of 10