BF1108 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Silicon RF switches

BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
1. Product profile
CAUTION
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
L_ins(on)
ISL_off
R_DSon
V_GS(p)
Quick reference data
Parameter
Conditions
Min Typ
on-state insertion loss R_S = R_L = 50 Ω; f ≤ 1 GHz; ^[1] -
-
V_SK = V_DK = 0 V; I_F = 0 mA
off-state isolation
R_S = R_L = 50 Ω; f ≤ 1 GHz;
V_SK = V_DK = 5 V; I_F = 1 mA
30 -
drain-source on-state V_KS = 0 V; I_D = 1 mA
resistance
-
12
gate-source pinch-off V_DS = 1 V; I_D = 20 µA
voltage
-
−3
Max Unit
2 dB
-
dB
20 Ω
−4 V
[1] I_F = diode forward current.