BC856T Datasheet, PDF (5/9 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
GRAPHICAL INFORMATION BC857BT
1000
handbook, halfpage
hFE
800
MGT715
600
(1)
400
(2)
200
(3)
0
−10^−2 −10^−1
−1
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
− 10
− 10²
− 10³
IC (mA)
Fig.6 DC current gain; typical values.
Product data sheet
BC856T; BC857T series
− 1200
ha_Vn_Bdb_Eook, halfpage
(mV)
− 1000
(1)
− 800
(2)
− 600
− 400
(3)
MGT716
− 200
0
−10^−2 −10^−1
−1
V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
− 10
− 10²
− 10³
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
− 10⁴
handbook, halfpage
VCEsat
(mV)
− 10³
MGT717
− 10²
(1)
− 10
− 10^−1
(3) (2)
−1
− 10
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
− 10²
− 10³
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
− 1200
h_Va_Bnd_Eb_so_aok_t , halfpage
(mV)
− 1000
(1)
− 800
(2)
− 600
(3)
− 400
MGT718
− 200
0
− 10^−1
−1
I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
− 10
− 10²
− 10³
IC (mA)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15
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