BC856T Datasheet, PDF (3/9 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856T; BC857T series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
in free air; note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
collector-base cut-off current V_CB = −30 V; I_E = 0
V_CB = −30 V; I_E = 0; T_j = 150 °C
I_EBO
emitter cut-off current
V_EB = −5 V; I_C = 0
h_FE
DC current gain
V_CE = −5 V; I_C = −2 mA
BC856AT; BC857AT
BC856BT; BC857BT
BC857CT
V_CEsat
V_BE
C_c
C_e
f_T
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V
V_CB = −10 V; f = 1 MHz; I_E = i_e = 0
V_EB = −0.5 V; f = 1 MHz; I_C = i_c = 0
I_C = −10 mA; V_CE = −5 V;
f = 100 MHz
F
noise figure
I_C = −200 μA; V_CE = −5 V;
R_S = 2 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
MIN.
−
−
−
125
220
420
−
−
−580
−
−
−
100
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
10
−
−
MAX.
−15
−5
−100
250
475
800
−200
−400
−700
−770
2.5
−
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
2000 Nov 15
3