 English |
|
|
|
|
|
|
|
| BAS21AVD Datasheet, PDF (5/11 Pages) NXP Semiconductors – High-voltage switching diodes | |||
| |||
| ◁ |
NXP Semiconductors
300
VR
(V)
200
mle167
BAS21AVD
High-voltage switching diodes
300
IF
(mA)
200
mbg442
100
100
0
0
50
100
150
200
Tamb (°C)
FR4 PCB, standard footprint
Fig. 5. Reverse voltage as a function of ambient
temperature; derating curve
0
0
100
Tamb (°C)
200
FR4 PCB, standard footprint
Fig. 6. Forward current as a function of ambient
temperature; derating curve
11. Test information
RS = 50 Ω
V = VR + IF Ã RS
(1) IR = 3 mA
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
Fig. 7. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAS21AVD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© NXP N.V. 2013. All rights reserved
5 / 11
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese