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BAS21AVD Datasheet, PDF (1/11 Pages) NXP Semiconductors – High-voltage switching diodes | |||
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BAS21AVD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠High switching speed: trr ⤠50 ns
⢠Reverse voltage: VR ⤠200 V
⢠Repetitive peak reverse voltage: VRRM ⤠250 V
⢠Small SMD plastic package
⢠Low capacitance: Cd ⤠5 pF
⢠AEC-Q101 qualified
⢠Repetitive peak forward current: IFRM ⤠1 A
3. Applications
⢠High-voltage switching in surface-mounted circuits
⢠Automotive
⢠Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ⤠300 µs; δ ⤠0.02
[1]
VR
reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ⤠300 µs; δ ⤠0.02
trr
reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
-
-
200 mA
-
-
200 V
-
25
100 nA
-
16
50
ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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