LPC11E36 Datasheet, PDF (43/66 Pages) NXP Semiconductors – 32-bit ARM Cortex-M0 microcontroller up to 128 kB flash up to 12 kB SRAM and 4 kB EEPROM USART

NXP Semiconductors
LPC11E3x
32-bit ARM Cortex-M0 microcontroller
10. Dynamic characteristics
10.1 Flash memory
Table 9. Flash characteristics
T_amb = 40 C to +85 C, unless otherwise specified.
Symbol Parameter
Conditions
N_endu
t_ret
endurance
retention time
powered
unpowered
t_er
erase time
sector or multiple
consecutive sectors
t_prog
programming time
Min Typ
Max
[1] _{10000 100000 -}
10
-
-
20
-
-
95
100
105
Unit
cycles
years
years
ms
[2] _{0.95 1}
1.05 ms
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
Table 10. EEPROM characteristics
T_amb = 40 C to +85 C; V_DD = 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure rate <
10 ppm for parts as specified below.
Symbol Parameter
Conditions
Min
Typ
Max Unit
N_endu
t_ret
endurance
retention time
powered
unpowered
100000 1000000
-
100
200
-
150
300
-
cycles
years
years
t_prog
programming
64 bytes
-
2.9
-
ms
time
10.2 External clock
Table 11. Dynamic characteristic: external clock
T_amb = 40 C to +85 C; V_DD over specified ranges.^[1]
Symbol Parameter
Conditions
Min
f_osc
oscillator frequency
1
T_cy(clk)
t_CHCX
t_CLCX
clock cycle time
clock HIGH time
clock LOW time
40
T_cy(clk)  0.4
T_cy(clk)  0.4
t_CLCH
clock rise time
-
t_CHCL
clock fall time
-
Typ^[2]
-
-
-
-
-
-
Max
25
1000
-
-
5
5
Unit
MHz
ns
ns
ns
ns
ns
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
LPC11E3X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 November 2013
© NXP B.V. 2013. All rights reserved.
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