PZT4403_10 Datasheet, PDF (4/9 Pages) NXP Semiconductors – 40 V, 600 mA PNP switching transistor

NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
300
h_FE
200
mgs333
100
0
−10^−1
−1
−10
−10²
I_C (mA) ^−103
V_CE = −1 V
Fig 1. DC current gain as a function of collector current; typical values
8. Test information
V_BB
V_CC
(probe)
oscilloscope
450 Ω
V_I
R_B
R2
R1
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
Fig 2.
V_i = −9.5 V; T = 500 μs; t_p = 10 μs
R1 = 68 Ω; R2 = 325 Ω; R_B = 325 Ω; R_C = 160 Ω
V_BB = 3.5 V; V_CC = −29.5 V
Oscilloscope input impedance Z_i = 50 Ω
Test circuit for switching times
mgd624
PZT4403_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 2 March 2010
© NXP B.V. 2010. All rights reserved.
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