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PZT4403_10 Datasheet, PDF (3/9 Pages) NXP Semiconductors – 40 V, 600 mA PNP switching transistor
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NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base
cut-off current
VCB = −40 V; IE = 0 A
-
-
−50 nA
IEBO
emitter-base
cut-off current
VEB = −5 V; IC = 0 A
-
-
−50 nA
hFE
DC current gain
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter
saturation voltage
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
VCE = −1 V;
IC = −0.1 mA
VCE = −1 V;
IC = −1 mA
VCE = −1 V;
IC = −10 mA
VCE = −1 V;
IC = −150 mA
VCE = −2 V;
IC = −500 mA
IC = −150 mA;
IB = −15 mA
IC = −500 mA;
IB = −50 mA
IC = −150 mA;
IB = −15 mA
IC = −500 mA;
IB = −50 mA
VCC = −29.5 V;
IC = −150 mA;
IBon = −15 mA;
IBoff = 15 mA;
VBB = 3.5 V
30
-
60
-
100 -
[1] 100
-
[1] 20
-
[1] -
-
[1] -
-
[1] -
-
[1] -
-
-
-
-
-
-
-
-
-
-
-
-
300
-
−400 mV
−750 mV
−950 mV
−1300 mV
15
ns
30
ns
40
ns
300 ns
tf
fall time
-
-
50
ns
toff
turn-off time
fT
transition frequency VCE = −10 V;
IC = −20 mA;
f = 100 MHz
-
-
200 -
350 ns
-
MHz
Cc
collector capacitance VCB = −5 V;
IE = ie = 0 A;
f = 1 MHz
-
-
8.5 pF
Ce
emitter capacitance
VEB = −500 mV;
IC = ic = 0 A;
f = 1 MHz
-
-
35
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PZT4403_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 2 March 2010
© NXP B.V. 2010. All rights reserved.
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