PMN38EN Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance see Figure 4
from junction to solder
point
[1] Mounted on a metal clad board
PMN38EN
N-channel TrenchMOS logic level FET
Min
Typ
Max
Unit
[1] _-
-
70
K/W
10²
03aj69
Z_th(j-sp)
(K/W) ^{δ = 0.5}
0.2
10
0.1
0.05
P
δ = ^tp
T
0.02
single pulse
1
10^-4
10^-3
10^-2
10^-1
1
t_p
T
10
t_p (s)
t
10²
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V_(BR)DSS
drain-source
I_D = 250 μA; V_GS = 0 V;
27
breakdown voltage T_j = -55 °C
I_D = 250 μA; V_GS = 0 V;
30
T_j = 25 °C
V_GS(th)
gate-source threshold I_D = 1 mA; V_DS = V_GS;
0.6
voltage
T_j = 150 °C
I_D =1 mA; V_DS = V_GS; T_j = -55 °C
-
I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
1
see Figure 7
I_DSS
drain leakage current V_DS = 30 V; V_GS = 0 V; T_j = 25 °C
-
V_DS = 30 V; V_GS = 0 V;
-
T_j = 150 °C
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
-
2.2
V
1.5
2
V
0.01
0.1
μA
-
10
μA
PMN38EN_2
Product data sheet
Rev. 02 — 3 October 2007
© NXP B.V. 2007. All rights reserved.
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