PMN38EN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PMN38EN
N-channel TrenchMOS logic level FET
Rev. 02 — 3 October 2007
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package. This product is designed and qualified for use in computing, communications,
consumer and industrial applications only.
1.2 Features
„ Logic level threshold
„ Surface-mounted package
„ Low threshold voltage
„ Very fast switching
1.3 Applications
„ Battery powered motor control
„ Driver FET in DC-to-DC converters
„ High speed switch in set top box power „ Load switch in notebook computers
supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Static characteristics
R_DSon drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 10 V;
see Figure 1 and 3
T_sp = 25 °C; see Figure 2
V_GS = 4.5 V; I_D = 2.8 A;
T_j = 25 °C; see Figure 8 and 9
Min Typ Max Unit
-
-
30 V
-
-
5.4 A
-
-
1.75 W
-
38 46 mΩ