PMBT3904 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN switching transistor

NXP Semiconductors
NPN switching transistor
Product data sheet
PMBT3904
SYMBOL
PARAMETER
CONDITIONS
f_T
transition frequency
F
noise figure
I_C = 10 mA; V_CE = 20 V;
f = 100 MHz
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.3
t_d
delay time
t_r
rise time
t_s
storage time
t_f
fall time
I_Con = 10 mA; I_Bon = 1 mA;
I_Boff = −1 mA
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
300
−
−
−
−
−
MAX.
−
5
35
35
200
50
UNIT
MHz
dB
ns
ns
ns
ns
500
handbook, halfpage
h _FE
400
(1)
300
(2)
200
(3)
100
0
10 ^−1
1
10
MGU821
10²
10³
IC (mA)
V_CE = 1 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 DC current gain; typical values.
250
handbook, halfpage
IC
(mA)
(1) (2) (3) (4) (5) (6) (7)
200
MGU822
150
(8)
(9)
100
(10)
50
0
0
2
4
6
8
10
VCE (V)
T_amb = 25 °C.
(1) I_B = 5.5 mA.
(2) I_B = 5 mA.
(3) I_B = 4.5 mA.
(4) I_B = 3.5 mA.
(5) I_B = 3 mA.
(6) I_B = 2.5 mA.
(7) I_B = 2 mA.
(8) I_B = 1.5 mA.
(9) I_B = 1 mA.
(10) I_B = 0.5 mA.
Fig.3 Collector current as a function of
collector-emitter voltage.
2004 Jan 12
4