PMBT3904 Datasheet, PDF (2/9 Pages) NXP Semiconductors – NPN switching transistor

NXP Semiconductors
NPN switching transistor
Product data sheet
PMBT3904
FEATURES
• Collector current capability I_C = 200 mA
• Collector-emitter voltage V_CEO = 40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT3906.
MARKING
TYPE NUMBER
PMBT3904
MARKING CODE⁽¹⁾
*1A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
QUICK REFERENCE DATA
SYMBOL
V_CEO
I_C
PARAMETER
collector-emitter voltage
collector current (DC)
MAX. UNIT
40
V
200 mA
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBT3904
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 12
2