PMBD914_09 Datasheet, PDF (4/10 Pages) NXP Semiconductors – Single high-speed switching diode

NXP Semiconductors
300
I_F
(mA)
200
mbg382
(1)
(2) (3)
PMBD914
Single high-speed switching diode
10²
I_FSM
(A)
10
mbg704
100
1
0
0
1
V_F (V)
2
(1) T_amb = 150 °C; typical values
(2) T_amb = 25 °C; typical values
(3) T_amb = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
10⁵
I_R
(nA)
10⁴
mga884
(1)
(2)
10³
(3)
10²
10
0
100
T_j (°C)
200
(1) V_R = 75 V; maximum values
(2) V_R = 75 V; typical values
(3) V_R = 25 V; typical values
Fig 3. Reverse current as a function of junction
temperature
10^−1
1
10
10²
10³
10⁴
t_p (µs)
Based on square wave currents.
T_j = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.8
C_d
(pF)
0.6
mbg446
0.4
0.2
0
0
4
8
f = 1 MHz; T_amb = 25 °C
12 _{VR (V)} 16
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
PMBD914_6
Product data sheet
Rev. 06 — 11 February 2009
© NXP B.V. 2009. All rights reserved.
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