PMBD914_09 Datasheet, PDF (3/10 Pages) NXP Semiconductors – Single high-speed switching diode

NXP Semiconductors
PMBD914
Single high-speed switching diode
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
P_tot
total power dissipation
T_amb ≤ 25 °C
[1][3] _-
T_j
junction temperature
-
T_stg
storage temperature
−65
Max
250
150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T_j = 25 °C prior to surge.
[3] Soldering point of cathode tab.
Unit
mW
°C
°C
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
R_th(j-t)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
500 K/W
[2] _-
-
330 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
I_R
reverse current
V_R = 25 V
V_R = 75 V
V_R = 25 V; T_j = 150 °C
V_R = 75 V; T_j = 150 °C
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
t_rr
reverse recovery time
V_FR
forward recovery voltage
Min Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] _-
-
[2] _-
-
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
[2] When switched from I_F = 10 mA; t_r = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
25 nA
1
µA
30 µA
50 µA
1.5 pF
4
ns
1.75 V
PMBD914_6
Product data sheet
Rev. 06 — 11 February 2009
© NXP B.V. 2009. All rights reserved.
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