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| PIMZ2 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN/PNP general-purpose double transistors | |||
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NXP Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
ICBO
collector-base cut-off current VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A; Tj = 150 °C
IEBO
emitter-base cut-off current VEB = 7 V; IC = 0 A
hFE
DC current gain
VCE = 6 V; IC = 1 mA
TR1 (PNP)
-
-
-
-
-
-
120
250
VCEsat collector-emitter saturation IC = â50 mA; IB = â5 mA
voltage
-
-
fT
transition frequency
IE = â2 mA; VCE = â12 V; f = 100 MHz
-
190
Cc
collector capacitance
IE = ie = 0 A; VCB = â12 V; f = 1 MHz
-
2.3
TR2 (NPN)
VCEsat collector-emitter saturation IC = 50 mA; IB = 5 mA
voltage
-
-
fT
transition frequency
Cc
collector capacitance
IE = 2 mA; VCE = 12 V; f = 100 MHz
IE = ie = 0 A; VCB = 12 V; f = 1 MHz
100
-
-
-
Max Unit
100
nA
50
μA
100
nA
560
â500 mV
-
MHz
5
pF
250
mV
-
MHz
3
pF
PIMZ2_PUMZ2_6
Product data sheet
Rev. 06 â 17 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 9
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