PIMH9 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm

NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
PIMH9; PUMH9; PEMH9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per transistor
R_th(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Per device
R_th(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
CONDITIONS
T_amb ≤ 25 °C
note 1
note 1
notes 1 and 2
T_amb ≤ 25 °C
note 1
note 1
notes 1 and 2
VALUE
625
417
625
416
208
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
R-----2--
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
V_CB = 50 V; I_E = 0 A
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A; T_j = 150 °C
V_EB = 5 V; I_C = 0 A
V_CE = 5 V; I_C = 5 mA
I_C = 5 mA; I_B = 0.25 mA
V_CE = 5 V; I_C = 100 μA
V_CE = 0.3 V; I_C = 1 mA
resistor ratio
C_c
collector capacitance
V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
MIN.
−
−
−
−
100
−
−
1.4
7
3.7
TYP.
−
−
−
−
−
−
0.7
0.8
10
4.7
MAX. UNIT
100 nA
1
μA
50
μA
150 μA
−
100 mV
0.5 V
−
V
13
kΩ
5.7
−
−
2.5 pF
2004 Apr 14
4