PIMH9 Datasheet, PDF (3/9 Pages) NXP Semiconductors – NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm

NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
PIMH9; PUMH9; PEMH9
ORDERING INFORMATION
TYPE NUMBER
PEMH9
PIMH9
PUMH9
NAME
−
−
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT457
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
V_CBO
V_CEO
V_EBO
V_i
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I_O
output current
I_CM
peak collector current
P_tot
total power dissipation
SOT363
SOT457
SOT666
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
Per device
P_tot
total power dissipation
SOT363
SOT457
SOT666
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 1
notes 1 and 2
T_amb ≤ 25 °C
note 1
note 1
notes 1 and 2
MIN.
−
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
MAX.
50
50
10
+40
−10
100
100
200
300
200
+150
150
+150
300
600
300
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
°C
°C
°C
mW
mW
mW
2004 Apr 14
3