PESD5V0V1BA Datasheet, PDF (4/13 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diodes

NXP Semiconductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
V_RWM
I_RM
V_BR
C_d
V_CL
r_dif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
V_RWM = 5 V
I_R = 5 mA
f = 1 MHz;
V_R = 0 V
I_PP = 4.8 A
I_R = 5 mA
-
-
5
-
< 1 10
5.8 6.8 7.8
-
11
13
[1] _-
-
12.5
-
-
35
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Unit
V
nA
V
pF
V
Ω
10³
P_PP
(W)
10²
006aab606
1.2
P_PP
P_PP(25°C)
0.8
001aaa193
10
0.4
1
1
10
10²
10³
t_p (µs)
0
0
50
100
150
200
T_j (°C)
Fig 3.
T_amb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0V1BA_BB_BL_1
Product data sheet
Rev. 01 — 28 July 2009
© NXP B.V. 2009. All rights reserved.
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