PESD5V0V1BA Datasheet, PDF(1/13 Page) NXP Semiconductors – Very low capacitance bidirectional ESD protection diodes

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PESD5V0V1BA Datasheet, PDF (1/13 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diodes

PESD5V0V1BA; PESD5V0V1BB;

PESD5V0V1BL

Very low capacitance bidirectional ESD protection diodes

Rev. 01 â 28 July 2009

Product data sheet

1. Product proï¬le

1.1 General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

Table 1. Product overview

Type number

Package

NXP

PESD5V0V1BA

SOD323

PESD5V0V1BB

SOD523

PESD5V0V1BL

SOD882

JEITA

SC-76

SC-79

Package conï¬guration

very small

ultra small and ï¬at lead

leadless ultra small

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 30 kV

I Very low diode capacitance: Cd = 11 pF I IEC 61000-4-2; level 4 (ESD)

I Max. peak pulse power: PPP = 45 W

I Low clamping voltage: VCL = 12.5 V

I IEC 61000-4-5 (surge); IPP = 4.8 A

I AEC-Q101 qualiï¬ed

I Ultra low leakage current: IRM < 1 nA

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Subscriber Identity Module (SIM) card

protection

I Communication systems

I Portable electronics

I 10/100 Mbit/s Ethernet

I FireWire

1.4 Quick reference data

Table 2. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

▷