PDTB113E Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

NXP Semiconductors
PDTB113E series
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
SOT346
SOT54
SOT23
Min Typ Max
[1]
-
-
500
-
-
250
-
-
500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −40 V; I_E = 0 A
current
V_CB = −50 V; I_E = 0 A
I_CEO
collector-emitter
cut-off current
V_CE = −50 V; I_B = 0 A
I_EBO
emitter-base cut-off V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = −5 V; I_C = −50 mA
I_C = −50 mA; I_B = −2.5 mA
V_I(off)
off-state input
voltage
V_CE = −5 V; I_C = −100 μA
V_I(on)
on-state input
voltage
V_CE = −0.3 V;
I_C = −20 mA
R1
bias resistor 1 (input)
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 100 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−100 nA
-
-
−0.5 μA
-
-
−4.0 mA
33
-
-
-
-
−0.3 mV
−0.6 −1.1 −1.5 V
−1.0 −1.4 −1.8 V
0.7 1.0 1.3 kΩ
0.9 1.0 1.1
-
11
-
pF
PDTB113E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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