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PDTB113E Datasheet, PDF (1/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ | |||
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PDTB113E series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 â 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTB113EK
SOT346
PDTB113ES[1]
SOT54
PDTB113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTD113EK
PDTD113ES
PDTD113ET
1.2 Features
 Built-in bias resistors
 Simplifies circuit design
 500 mA output current capability
 Reduces component count
 Reduces pick and place costs
 ±10 % resistor ratio tolerance
1.3 Applications
 Digital application in automotive and
industrial segments
 Controlling IC inputs
 Cost-saving alternative for BC807 series
in digital applications
 Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
-
-
â50 V
-
-
â500 mA
0.7
1.0
1.3
kΩ
0.9
1.0
1.1
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