PBSS4230PAN Datasheet, PDF (4/17 Pages) NXP Semiconductors – 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor

NXP Semiconductors
1.5
(1)
P_tot
(W)
1.0
(2)
(3) (4)
(5)
0.5 ⁽⁶⁾
(7)
(8)
PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
006aad165
0
-75
-25
25
75
Fig. 1.
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm²
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm²
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm²
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm²
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
Per transistor: power derating curves
125
175
T_amb (°C)
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
R_th(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
-
338 K/W
[2]
-
-
219 K/W
[3]
-
-
236 K/W
[4]
-
-
179 K/W
[5]
-
-
278 K/W
[6]
-
-
164 K/W
[7]
-
-
179 K/W
[8]
-
-
86
K/W
-
-
30
K/W
PBSS4230PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
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