PBSS4230PAN Datasheet, PDF (1/17 Pages) NXP Semiconductors – 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor

PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
14 December 2012
Product data sheet
1. General description
NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.
2. Features and benefits
• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
V_CEO
collector-emitter
voltage
I_C
collector current
I_CM
peak collector current
Per transistor
R_CEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; t_p ≤ 1 ms
I_C = 1 A; I_B = 0.1 A; pulsed; t_p ≤ 300 µs;
δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
2
A
-
-
3
A
-
-
145 mΩ
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