PBSS302ND Datasheet, PDF (4/14 Pages) NXP Semiconductors – 40 V, 4 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS302ND
40 V, 4 A NPN low V_CEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
Min Typ Max Unit
in free air
[1] _-
-
350 K/W
[2] _-
-
208 K/W
[3] _-
-
167 K/W
[4] _-
-
113 K/W
[1][5] _-
-
50
K/W
-
-
45
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width t_p ≤ 10 ms.
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa271
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302ND_2
Product data sheet
Rev. 02 — 18 February 2008
© NXP B.V. 2008. All rights reserved.
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