PBSS302ND Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 4 A NPN low VCEsat (BISS) transistor

PBSS302ND
40 V, 4 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 18 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PD.
1.2 Features
I Ultra low collector-emitter saturation voltage V_CEsat
I 4 A continuous collector current capability I_C
I Up to 15 A peak current
I Very low collector-emitter saturation resistance
I High efficiency due to less heat generation
1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t_p ≤ 1 ms
I_C = 6 A;
I_B = 600 mA
Min Typ Max
-
-
40
[1] _-
-
4
-
-
15
[2] _-
55
75
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ