BUJD203A Datasheet, PDF (4/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
120
P_der
(%)
80
BUJD203A
NPN power transistor with integrated diode
001aab993
40
0
0
40
80
120
160
T_mb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
10²
I_C
(A)
I_CM(ma¹_x⁰₎
I_C(max)
1
10^−1
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duty cycle = 0.01
II₍₃₎
t_p = 20 μs
(1)
50 μs
100 μs
200 μs
(2)
500 μs
DC
10^−2
I₍₃₎
10^−3
1
10
10²
Fig 4.
1) P_tot maximum and P_tot peak maximum lines
2) Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that R_BE ≤ 100 Ω and t_p ≤ 0.6 μs
Forward bias safe operating area for T_mb ≤ 25 °C
III₍₃₎
10³
V_CEclamp (V)
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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