BUJD203A Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
 Fast switching
 High voltage capability
 Integrated anti-parallel E-C diode
 Very low switching and conduction
losses
1.3 Applications
 DC-to-DC converters
 Electronic lighting ballasts
 Inverters
 Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
I_C
collector current see Figure 1; see Figure 2; DC;
see Figure 4
P_tot
total power
see Figure 3; T_mb ≤ 25 °C
dissipation
V_CESM
collector-emitter V_BE = 0 V
peak voltage
Static characteristics
h_FE
V_CEOsus
DC current gain I_C = 500 mA; V_CE = 5 V;
see Figure 11; T_j = 25 °C
V_CE = 5 V; I_C = 3 A;
T_mb = 25 °C; see Figure 11
collector-emitter I_B = 0 A; L_C = 25 mH;
sustaining voltage I_C = 10 mA; see Figure 6;
see Figure 7
Min Typ Max Unit
-
-
4
A
-
-
80 W
-
-
850 V
13 21 32
-
12.5 -
400 450 -
V