BLF7G22L-130 Datasheet, PDF (4/15 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance information
I_Dq = 950 mA; main transistor V_DS = 28 V.
Z_S and Z_L defined in Figure 1.
f
Z_S
(MHz)
(Ω)
2050
1.3 − j3.6
2140
1.9 − j4.2
2230
3.1 − j4.7
Z_L
(Ω)
2.2 − j2.6
2.0 − j2.6
1.9 − j2.8
gate
Z_S
Fig 1. Definition of transistor impedance
drain
Z_L
001aaf059
BLF7G22L-130_7G22LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 November 2010
© NXP B.V. 2010. All rights reserved.
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