BLF7G22L-130 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G22L-130;
BLF7G22LS-130
Power LDMOS transistor
Rev. 3 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
η_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
950 28 30
18.5 32 −32^[1]
1-carrier W-CDMA
2110 to 2170
950 28 33
18.5 33 −39^[2]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low R_th providing excellent thermal stability
„ Designed for broadband operation (2000 MHz to 2200 MHz)
„ Lower output capacitance for improved performance in Doherty applications
„ Designed for low memory effects providing excellent digital pre-distortion capability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range