BLF3G21-30 Datasheet, PDF (4/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G21-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V_DS = 26 V;
f = 2200 MHz at rated load power.
15
G_p
(dB)
13
001aaf790
50
η_d
(%)
40
001aaf791
11
30
9
20
7
10
5
10^−1
1
10
10²
P_L (W)
V_DS = 26 V; I_Dq = 450 mA; T_h = 25 °C; f = 2000 MHz
Fig 1. Power gain as function of CW load power;
typical values
0
10^−1
1
10
10²
P_L (W)
V_DS = 26 V; I_Dq = 450 mA; T_h = 25 °C; f = 2000 MHz
Fig 2. Drain efficiency as function of CW load power;
typical values
15
G_p
G_p
(dB)
13
001aaf792
50
η_d
(%)
40
0
IMD
(dBc)
−20
001aaf793
11
30
9
20
7
10
η_D
5
10^−1
1
0
10
10²
P_L(PEP) (W)
V_DS = 26 V; I_Dq = 450 mA; T_h ≤ 25 °C;
f₁ = 2000 MHz; f₂ = 2000.1 MHz
Fig 3. Two-tone power gain and drain efficiency as
functions of peak envelope load power; typical
values
−40
IMD3
−60
IMD5
−80
10^−1
IMD7
1
10
10²
P_L(PEP) (W)
V_DS = 26 V; I_Dq = 450 mA; T_h ≤ 25 °C;
f₁ = 2000 MHz; f₂ = 2000.1 MHz
Fig 4. Two-tone intermodulation distortion as function
of peak envelope load power; typical values
BLF3G21-30_1
Product data sheet
Rev. 01 — 14 February 2007
© NXP B.V. 2007. All rights reserved.
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