BLF3G21-30 Datasheet, PDF (1/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF3G21-30
UHF power LDMOS transistor
Rev. 01 — 14 February 2007
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz.
Table 1. Typical class-AB RF performance
I_Dq = 450 mA; T_h = 25 °C in a common source test circuit.
Mode of operation
f
P_L
(MHz)
(W)
G_p
η_D
(dB) (%)
CW
2000
36
12.5 43
Two-tone
2000
30
13.5 35
0.1 to 10 13.8 -
IMD3 P_L(1dB)
(dB) (W)
-
36
−26 -
< −50 -
Table 2. Typical class-A RF performance
I_Dq = 1 A; T_h = 25 °C in a modified PHS test fixture.
Mode of operation
f
(MHz)
PHS
1880 to 1920
P_L(AV)
(W)
9
G_p
η_D
(dB) (%)
16 20
ACPR₆₀₀
(dBc)
−75
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Excellent back-off linearity
I Typical PHS performance at a supply voltage of 26 V and I_Dq of 1 A:
N Average output power = 9 W
N Gain = 16 dB (typ)
N Efficiency = 20 %
N ACPR₆₀₀ = −75 dBc
I Easy power control
I Excellent ruggedness
I High power gain
I Excellent thermal stability
I Designed for broadband operation (HF to 2200 MHz)