BFG590 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
f_T
collector-base breakdown voltage I_C = 0.1 mA; I_E = 0
collector-emitter breakdown voltage I_C = 10 mA; I_B = 0
emitter-base breakdown voltage I_E = 0.1 mA; I_C = 0
collector-base leakage current
V_CB = 10 V; I_E = 0
DC current gain
I_C = 70 mA; V_CE = 8 V; see Fig.3
transition frequency
I_C = 80 mA; V_CE = 4 V;
f = 1 GHz; see Fig.5
C_re
feedback capacitance
I_C = 0; V_CB = 8 V; f = 1 MHz;
see Fig.4
G_UM
|S₂₁|²
maximum unilateral power gain;
note 1
insertion power gain
I_C = 80 mA; V_CE = 4 V;
f = 900 MHz; T_amb = 25 °C
I_C = 80 mA; V_CE = 4 V; f = 2 GHz;
T_amb = 25 °C
I_C = 80 mA; V_CE = 4 V;
f = 900 MHz; T_amb = 25 °C
MIN.
20
15
3
−
60
−
−
−
−
−
TYP.
−
−
−
−
120
5
0.7
13
7.5
11
MAX. UNIT
−
V
−
V
−
V
100 nA
250
−
GHz
−
pF
−
dB
−
dB
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM
=
10
log --₍--1-----_–------S----₁---₁----S₂---₎-²---¹₍---1-²----_–------S----₂--₂-----₂---₎-
dB.
Rev. 04 - 12 November 2007
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