BFG590 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
BFG590
BFG590/X
CODE
%MH
%MN
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG590
BFG590/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
|S₂₁|²
insertion power gain
CONDITIONS
open emitter
open base
T_s ≤ 60 °C
I_C = 35 mA; V_CE = 8 V
I_C = 0; V_CE = 8 V; f = 1 MHz
I_C = 80 mA; V_CE = 4 V; f = 1 GHz
I_C = 80 mA; V_CE = 4 V;
f = 900 MHz; T_amb = 25 °C
I_C = 80 mA; V_CE = 4 V;
f = 900 MHz; T_amb = 25 °C
MIN.
−
−
−
−
50
−
−
−
−
TYP.
−
−
−
−
90
0.7
5
13
11
MAX. UNIT
20
V
15
V
200 mA
400 mW
280
−
pF
−
GHz
−
dB
−
dB
Rev. 04 - 12 November 2007
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