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BF1102_00 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FETs
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Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per MOS-FET unless otherwise specified
V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0; ID = 10 µA
7
−
V
V(BR)G1-SS gate 1-source breakdown voltage VGS = VDS = 0; IG1-S = 10 mA
6
15 V
V(BR)G2-SS gate 2-source breakdown voltage VGS = VDS = 0; IG2-S = 5 mA
6
15 V
V(F)S-G1 forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5 1.5 V
V(F)S-G2 forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5 1.5 V
VG1-S(th) gate 1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3 1
V
VG2-S(th) gate 2-source threshold voltage VDS = 5 V; VG1-S = 4 V; ID = 100 µA
0.3 1.2 V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1 12
20
mA
IG1-S
gate 1 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
−
50 nA
IG2-S
gate 2 cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
−
20 nA
Note
1. RG1 connects gate 1 to VGG = 5 V.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified (note 1)
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Xmod
forward transfer admittance Tj = 25 °C
36 43 50 mS
input capacitance at gate 1 f = 1 MHz
2
2.8 3.6 pF
input capacitance at gate 2 f = 1 MHz; (note 2)
−
−
7
pF
output capacitance
f = 1 MHz
−
1.6 2.5 pF
reverse transfer capacitance f = 1 MHz
−
30 50 fF
noise figure
f = 800 MHz; YS = YS opt
−
2
2.8 dB
cross-modulation
fw = 50 MHz; funw = 60 MHz; (note 3)
input level for k = 1% at 0 dB AGC
85 −
−
dBµV
input level for k = 1% at 40 dB AGC 100 −
−
dBµV
Notes
1. Not used MOS-FET: VG1-S = 0; VDS = 0.
2. Gate 2 capacitance of both MOS-FETs.
3. Measured in test circuit of Fig.20.
2000 Apr 11
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