BF1102_00 Datasheet, PDF (2/16 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FETs

Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
FEATURES
• Two low noise gain controlled amplifiers in a single
package
• Specially designed for 5 V applications
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
PINNING - SOT363
DESCRIPTION
PIN
BF1102
BF1102R
1
gate 1 (1)
gate 1 (1)
2
gate 2 (1 and 2) source (1 and 2)
3
drain (1)
drain (1)
4
drain (2)
drain (2)
5
source (1 and 2) gate 2 (1 and 2)
6
gate 1 (2)
gate 1 (2)
handbook, halfpage
g2 (1, 2)
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
654
g1 (1)
AMP1
d (1)
g1 (2)
AMP2
d (2)
123
BF1102 marking code: W1.
BF1102R marking code: W2-.
s (1, 2)
MBL029
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified
V_DS
I_D
P_tot
y_fs
C_ig1-s
C_rss
F
X_mod
T_j
drain-source voltage
−
−
drain current (DC)
−
−
total power dissipation
T_s ≤ 102 °C; note 1
−
−
forward transfer admittance
I_D = 15 mA
36
43
input capacitance at gate 1
I_D = 15 mA
−
2.8
reverse transfer capacitance
f = 1 MHz
−
30
noise figure
f = 800 MHz
−
2
cross-modulation
input level for k = 1% at 40 dB AGC 100 −
operating junction temperature
−
−
Note
1. T_s is the temperature at the soldering point of the source lead.
7
V
40
mA
200 mW
−
mS
3.6 pF
50
fF
2.8 dB
−
dBµV
150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Apr 11
2