BCV29 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN Darlington transistors

NXP Semiconductors
NPN Darlington transistors
Product data sheet
BCV29; BCV49
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
collector-base cut-off current
BCV29
BCV49
emitter-base cut-off current
I_E = 0 A; V_CB = 30 V
I_E = 0 A; V_CB = 60 V
I_C = 0 A; V_EB = 10 V
−
−
100 nA
−
−
100 nA
−
−
100 nA
DC current gain
BCV29
V_CE = 5 V; see Fig.2
I_C = 1 mA
I_C = 10 mA
4000 −
−
10000 −
−
I_C = 100 mA
I_C = 500 mA
20000 −
−
4000 −
−
DC current gain
BCV49
V_CE = 5 V; see Fig.2
I_C = 1 mA
I_C = 10 mA
I_C = 100 mA
2000 −
−
4000 −
−
10000 −
−
I_C = 500 mA
2000 −
−
collector-emitter saturation voltage I_C = 100 mA; I_B = 0.1 mA
−
−
1
base-emitter saturation voltage I_C = 100 mA; I_B = 0.1 mA
−
−
1.5
base-emitter on-state voltage
I_C = 10 mA; V_CE = 5 V
−
−
1.4
transition frequency
I_C = 30 mA; V_CE = 5 V; f = 100 MHz −
220 −
V
V
V
MHz
2004 Dec 06
4