BCV29 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN Darlington transistors

NXP Semiconductors
NPN Darlington transistors
Product data sheet
BCV29; BCV49
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BCV29
BCV49
V_CES
collector-emitter voltage
BCV29
BCV49
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
MIN.
open emitter
−
−
V_BE = 0 V
−
−
open collector
−
−
−
−
T_amb ≤ 25 °C; note 1 −
−65
−
−65
MAX.
40
80
30
60
10
500
1
200
1.3
+150
150
+150
UNIT
V
V
V
V
V
mA
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_th(j-a)
R_th(j-s)
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 06
3